NanoComputer

Researchers from the International Center for Materials Nanoarchitectonics –  MANA- have developed the world's highest performance thin-film capacitors using a new high-permittivity (high-k) dielectric sheet with molecular-level thickness (~1 nm). This technology may revolutionize the next-generation electronics. 

The announcement of this breakthrough comes from a research group led by MANA Scientist Dr. Minoru Osada and Principal Investigator Dr. Takayoshi Sasaki of the International Center for Materials Nanoarchitectonics (MANA) at the National Institute for Material Science (NIMS) in Japan. Good insulating, high-k nanofilms are expected to be key to future applications as predicted by the International Technology Roadmap for Semiconductors (ITRS). 

Source: http://www.nims.go.jp/mana/