A team of researchers from Taiwan and the University of California, Berkeley, has harnessed nanodots to create a new electronic memory technology that can write and erase data 10-100 times faster than today's mainstream charge-storage memory products. The new system uses a layer of non-conducting material embedded with discrete (non-overlapping) silicon nanodots, each approximately 3 nanometers across.
"The metal-gate structure is a mainstream technology on the path toward nanoscale complementary metal-oxide-semiconductor (CMOS) memory technology," said co-author Jia-Min Shieh, researcher, National Nano Device Laboratories, Hsinchu, Taiwan. "Our system uses numerous, discrete silicon nanodots for charge storage and removal. These charges can enter (data write) and leave (data erase) the numerous discrete nanodots in a quick and simple way."